BeTe/Si heterostructures for MIS and quantum device applications

Nanotechnology

Volumn 10, Issue 2, 1999, Pages 187-191

  Jiang, Shan ^a   Barrios, Pedro ^a,b   Bate, Robert T ^a,b   Kirk, Wiley P ^a,b  

^a TEXAS A AND M UNIVERSITY   (United States)

^b UNIVERSITY OF TEXAS AT DALLAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM COMPOUNDS; CRYSTAL DEFECTS; ELECTRIC INSULATING MATERIALS; GATES (TRANSISTOR); MISFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTING ZINC COMPOUNDS;

BERYLLIUM CHALCOGENIDES;

HETEROJUNCTIONS;

EID: 0032652857     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/10/2/313     Document Type: Article

References (8)

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4. Zhou X, Jiang S, Li F, Spencer G F, Bate R T and Kirk W P 1995 Proc. 1995 IEEE/Cornell Conf. on Advanced Concepts in High Speed Semiconducting Devices and Circuits (Ithaca, NY) vol 1, p 498
5. Takeuchi L, Suzuki K and Maeda K 1984 Phil. Mag. A 50 171
6. Zhou X, Jiang S and Kirk W P 1997 J. Cryst. Growth 175/176 624
7. González-Díaz M, Rodríguez-Hernández P and Muñoz A 1997 Phys. Rev. B 55 14 043
8. Cullity B D 1978 Elements of X-Ray Diffraction 2nd edn (Reading, MA: Addison-Wesley) pp 297-300