Wide band gap a-Si:H based high gain vidicon devices prepared by chemical annealing

Materials Research Society Symposium - Proceedings

Volumn 507, Issue , 1999, Pages 357-362

  Futako, W ^a   Sugawara, T ^a   Kamiya, T ^a   Fortmann, C M ^a   Shimizu, I ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ENERGY GAP; HYDROGENATION; LEAKAGE CURRENTS; POINT DEFECTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING;

CHEMICAL ANNEALING; DARK CURRENTS; VIDICON DEVICES;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0032652163     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)