Microcrystalline silicon growth: Deposition rate limiting factors

Materials Research Society Symposium - Proceedings

Volumn 507, Issue , 1999, Pages 505-510

  Hamma, S ^a   Colliquet, D ^a   Roca i Cabarrocas, P ^a  

^a ECOLE POLYTECHNIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTALLIZATION; ELLIPSOMETRY; GLASS; HYDROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PRESSURE EFFECTS; SEMICONDUCTING FILMS; SUBSTRATES; ULTRAVIOLET SPECTROSCOPY;

HYDROGEN DILUTION TECHNIQUE; LAYER-BY-LAYER (LBL) TECHNIQUE; MICROCRYSTALLINE SILICON;

SEMICONDUCTING SILICON;

EID: 0032651734     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (19)