Programmable 3-dimensional memories based on current induced conductivity in hydrogenated amorphous silicon nitride

Materials Research Society Symposium - Proceedings

Volumn 507, Issue , 1999, Pages 339-344

  Shannon, J M ^a   Lau, S P ^a   Sealy, B J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS MATERIALS; ARRAYS; CHEMICAL BONDS; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; HYDROGENATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR METAL BOUNDARIES; SILICON NITRIDE;

PROGRAMMABLE DEVICES;

SEMICONDUCTOR STORAGE;

EID: 0032651368     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)