Molecular beam epitaxy of CdS/ZnSe heterostructures

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 453-456

  Petillon, S ^a   Dinger, A ^a   Grun M ^a   Hetterich, M ^a   Kazukauskas, V ^a   Klingshirn, C ^a   Liang, J ^b   Weise, B ^b   Wagner, V ^b   Geurts, J ^b  

^a UNIVERSITY OF KARLSRUHE   (Germany)

^b UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; HETEROJUNCTIONS; PHOTOLUMINESCENCE; QUENCHING; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES; X RAY CRYSTALLOGRAPHY;

CRITICAL THICKNESS;

MOLECULAR BEAM EPITAXY;

EID: 0032650995     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01374-8     Document Type: Article

References (6)

1. O'Donnell K.P., Henderson B. J. Lumin. 52:1992;133.
2. Bradley I.V.et al. J. Crystal Growth. 159:1996;551.
3. M. Hetterich, Molekularstrahlepitaxie, strukturelle und optische Eigenschaften ultradünner CdS/ZnS-Quantentrogstrukturen, Ph.D. Thesis, Universität Karlsruhe, Germany, Shaker, Aachen, Maastricht, 1998.
4. Matthews J.W., Blakeslee A.E. J. Crystal Growth. 27:1974;118.
5. V. Kazukauskas, M. Grün, S. Petillon, A. Storzum, C. Klingshirn, Proc. 24th Int. Conf. on the Physics of Semiconductors (ICPS-24), Jerusalem, Israel, 2-7 August 1998, to be published.
6. A. Dinger, S. Petillon, M. Hetterich, M. Göppert, M. Grün, C. Klingshirn, Proc. 24th Int. Conf. on the Physics of Semiconductors (ICPS-24), Jerusalem, Israel, 2-7 August 1998, to be published.