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Volumn 27, Issue 1, 1999, Pages 106-107
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Molecular dynamics simulations of Ion-induced rearrangement of ultrathin oxide films on silicon
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Author keywords
[No Author keywords available]
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Indexed keywords
ARGON;
ATOMS;
COMPUTER SIMULATION;
ION BOMBARDMENT;
MOLECULAR DYNAMICS;
OXIDES;
OXYGEN;
POSITIVE IONS;
SILICON;
SPUTTERING;
SURFACE CLEANING;
ION INDUCED REARRANGEMENT;
OXIDE ISLAND;
ULTRATHIN OXIDE FILMS;
ULTRATHIN FILMS;
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EID: 0032650245
PISSN: 00933813
EISSN: None
Source Type: Journal
DOI: 10.1109/27.763068 Document Type: Article |
Times cited : (3)
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References (9)
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