메뉴 건너뛰기




Volumn 27, Issue 1, 1999, Pages 106-107

Molecular dynamics simulations of Ion-induced rearrangement of ultrathin oxide films on silicon

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ATOMS; COMPUTER SIMULATION; ION BOMBARDMENT; MOLECULAR DYNAMICS; OXIDES; OXYGEN; POSITIVE IONS; SILICON; SPUTTERING; SURFACE CLEANING;

EID: 0032650245     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/27.763068     Document Type: Article
Times cited : (3)

References (9)
  • 1
    • 0012392891 scopus 로고    scopus 로고
    • Synergistic effects in annealing and low energy ion bombardment of Si(100) surfaces
    • S. M. Lee, C. J. Fell, D. Marion, and J. W. Rabalais, "Synergistic effects in annealing and low energy ion bombardment of Si(100) surfaces," J. Appl. Phys., vol. 83, pp. 5217-5223, 1998.
    • (1998) J. Appl. Phys. , vol.83 , pp. 5217-5223
    • Lee, S.M.1    Fell, C.J.2    Marion, D.3    Rabalais, J.W.4
  • 2
    • 0028497126 scopus 로고
    • Modeling oxygen defects in silicon crystals using an empirical interatomic potential
    • Z. Jiang and R. A. Brown, "Modeling oxygen defects in silicon crystals using an empirical interatomic potential," Chem. Eng. Sci., vol. 49, pp. 2991-3000, 1994.
    • (1994) Chem. Eng. Sci. , vol.49 , pp. 2991-3000
    • Jiang, Z.1    Brown, R.A.2
  • 3
    • 0001146393 scopus 로고
    • Atomistic calculation of oxygen diffusivity in crystalline silicon
    • Z. Jiang and R. A. Brown, "Atomistic calculation of oxygen diffusivity in crystalline silicon," Phys. Rev. Lett., vol. 74, pp. 2046-2049, 1995.
    • (1995) Phys. Rev. Lett. , vol.74 , pp. 2046-2049
    • Jiang, Z.1    Brown, R.A.2
  • 5
    • 0020748016 scopus 로고
    • Energy dependence of the sputtering yield of silicon bombarded with neon, argon, krypton, and xenon ions
    • P. C. Zalm, "Energy dependence of the sputtering yield of silicon bombarded with neon, argon, krypton, and xenon ions," J. Appl. Phys., vol. 54, pp. 2660-2666, 1983.
    • (1983) J. Appl. Phys. , vol.54 , pp. 2660-2666
    • Zalm, P.C.1
  • 6
    • 0001006866 scopus 로고    scopus 로고
    • Molecular dynamics simulations of low-energy (25-200 eV) argon ion interactions with silicon surfaces: Sputter yields and product formation pathways
    • N. A. Kubota and D. J. Economou, "Molecular dynamics simulations of low-energy (25-200 eV) argon ion interactions with silicon surfaces: Sputter yields and product formation pathways," J. Appl. Phys., vol. 83, pp. 4055-4063, 1998.
    • (1998) J. Appl. Phys. , vol.83 , pp. 4055-4063
    • Kubota, N.A.1    Economou, D.J.2
  • 8
    • 0026863467 scopus 로고
    • The reaction of atomic oxygen with Si(100) and Si(111). II. Adsorption, passive oxidation and the effect of coincident ion bombardment
    • J. R. Engstrom, D.J. Bonser, and T. Engel, "The reaction of atomic oxygen with Si(100) and Si(111). II. Adsorption, passive oxidation and the effect of coincident ion bombardment," Surf. Sci., vol. 268, pp. 238-264, 1992.
    • (1992) Surf. Sci. , vol.268 , pp. 238-264
    • Engstrom, J.R.1    Bonser, D.J.2    Engel, T.3
  • 9
    • 0542431427 scopus 로고
    • R. A. Sayle, Glaxo Research and Development, Biomolecular Structures Group
    • RasMol Molecular Graphics Visualization Tool, R. A. Sayle, Glaxo Research and Development, Biomolecular Structures Group, 1994.
    • (1994) RasMol Molecular Graphics Visualization Tool


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.