Growth and physicochemical characterization of CuAlTe2 films obtained by reaction, induced by annealing, between Cu/Al/Te/Al/Cu... Al/Cu/Al/Te layers sequentially deposited

Journal of Materials Science

Volumn 34, Issue 8, 1999, Pages 1847-1853

  Benchouk, K ^a   El Moctar, C ^b   Bernede, J C ^b   Marsillac, S ^b   Pouzet, J ^b   Barreau, N ^b   Emziane, M ^b  

^a UNIVERSITY OF ORAN   (Algeria)

^b UNIVERSITÉ DE NANTES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BINDING ENERGY; EVAPORATION; FILM GROWTH; FILM PREPARATION; METALLIC FILMS; RAMAN SCATTERING; SEMICONDUCTING FILMS; SYNTHESIS (CHEMICAL); THIN FILMS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

MICROPROBE ANALYSIS;

COPPER ALLOYS;

EID: 0032648520     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1004575612586     Document Type: Article

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