Novel SiC/Si heterojunction diode with high-temperature bi-directional N-shaped negative-differential-resistances for high-temperature applications

Solid-State Electronics

Volumn 43, Issue 7, 1999, Pages 1215-1217

  Wu, Kuen Hsien ^a   Fang, Yean Kuen ^b   Ho Jyh Jier, ^b   Hsieh, Wen Tse ^b   Chen, Tzer Jing ^c  

^a SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b Dept Elec Eng Natl Cheng K   (Taiwan)

^c FORTUNE INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC RESISTANCE; HETEROJUNCTIONS; HIGH TEMPERATURE APPLICATIONS; SWITCHES;

HETEROJUNCTION DIODES; HIGH TEMPERATURE SOLID STATE SWITCHES; NEGATIVE DIFFERENTIAL RESISTANCE; PEAK TO VALLEY CURRENT RATIOS; REVERSE BIAS;

SEMICONDUCTOR DIODES;

EID: 0032647622     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00120-3     Document Type: Article

References (8)

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