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Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 234-238

Photoluminescence of 4H-SiC: Some remarks

(4) Henry, A a,b Ivanov, I G a Ellison, A a Janzen E a

a LINKÖPING UNIVERSITY (Sweden)

b ABB CORPORATE RESEARCH (Sweden)

Author keywords

4H SiC; Bulk; Epilayer; Photoluminescence

Indexed keywords

CRYSTAL GROWTH; EMISSION SPECTROSCOPY; ENERGY GAP; FILM GROWTH; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; THERMAL EFFECTS;

EPILAYERS;

SILICON CARBIDE;

EID: 0032645092 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(98)00509-1 Document Type: Article

Times cited : (10)

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