SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 349, Issue 1, 1999, Pages 266-269

Structural transition of crystalline Y2O3 film on Si(111) with substrate temperature

(7) Cho, M H a Ko, D H a Jeong, K a Whangbo, S W a Whang, C N a Choi, S C b Cho, S J c

a Yonsei University (South Korea)

b Korea Institute of Science and Technology (South Korea)

c Kyungsung University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH; CRYSTALLIZATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON; SINGLE CRYSTALS; SUBSTRATES; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS; YTTRIUM COMPOUNDS;

IONIZED CLUSTER BEAM (ICB) DEPOSITION; ULTRAHIGH VACUUM (UHV);

THIN FILMS;

EID: 0032644955 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(99)00174-1 Document Type: Article

Times cited : (69)

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