Fabrication of submicron bscco stacked junctions by focused ion beam (fib)

IEEE Transactions on Applied Superconductivity

Volumn 9, Issue 2 PART 3, 1999, Pages 4312-4315

  Latyshev, Yu I ^a,b   Kim, S J ^a,b   Yamashita, T ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL WHISKERS; CURRENT VOLTAGE CHARACTERISTICS; DISLOCATIONS (CRYSTALS); ENERGY GAP; ION BEAMS; OXIDE SUPERCONDUCTORS; SINGLE CRYSTALS; SUPERCONDUCTING TRANSITION TEMPERATURE; TUNNEL JUNCTIONS;

DOUBLE SIDED PROCESSING; FOCUSED ION BEAM; INTRINSIC JOSEPHSON EFFECT; SUBMICRON SIZE;

JOSEPHSON JUNCTION DEVICES;

EID: 0032644842     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/77.783979     Document Type: Article

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