Uniformity of GaInAsP/GaInAsP multiquantum well structures grown in multiwafer reactors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3621, Issue , 1999, Pages 170-178

  Deufel, Markus ^a   Heuken, Michael ^a   Beccard, Rainer ^a   Juergensen, Holger ^a   Woelk, E ^a  

^a AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FLOW CONTROL; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE CONTROL;

MULTIWAFER REACTORS;

LIGHT EMITTING DIODES;

EID: 0032644576     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (8)