Characterization of the post dry-etch cleaning of silicon for Ti-self-aligned silicide technology

Journal of the Electrochemical Society

Volumn 146, Issue 4, 1999, Pages 1549-1556

  Kim, Yong Bae ^a   Baklanov, Mikhail R ^a   Conard, Thierry ^a   De Potter, Muriel ^a   Vanhaeleemeersch, Serge ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBON INORGANIC COMPOUNDS; DRY CLEANING; FLUORINE; FLUOROCARBONS; PLASMA ETCHING; POLYMERS; REACTIVE ION ETCHING; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

AMMONIA HYDROGEN PEROXIDE MIXTURE; OXYGEN PLASMA; SILICON SURFACE; TITANIUM SILICIDE TECHNOLOGY;

SILICON;

EID: 0032644220     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391803     Document Type: Article

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