Ultra-low threshold ZnSe-based lasers with novel design of active region

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 942-945

  Ivanov, S V ^a   Toropov, A A ^a   Sorokin, S V ^a   Shubina, T V ^a   Lebedev, A V ^a   Sedova, I V ^a   Sitnikova, A A ^a   Zolotareva, R V ^a   Kop'ev, P S ^a   Alferov, Zh I ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; MONOLAYERS; OPTICAL WAVEGUIDES; QUANTUM EFFICIENCY; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS; SEMICONDUCTOR SUPERLATTICES;

ELECTRONIC CONFINEMENT; FRACTIONAL MONOLAYERS (FM); OPTICAL CONFINEMENT; RADIATIVE RECOMBINATION CENTERS; SHORT-PERIOD SUPERLATTICE WAVEGUIDES; THRESHOLD POWER DENSITY;

MOLECULAR BEAM EPITAXY;

EID: 0032643211     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01498-5     Document Type: Article

References (5)

1. Kato E., Noguchi H., Nagai M., Okuyama H., Kijima S., Ishibashi A. Electron. Lett. 34:1998;282.
2. Ivanov S., Sorokin S., Krestnikov I., Faleev N., Ber B., Sedova I., Kop'ev P. J. Crystal Growth. 184/185:1998;70.
3. Ivanov S.V., Toropov A.A., Shubina T.V., Sorokin S.V., Lebedev A.V., Sedova I.V., Kop'ev P.S., Pozina G.R., Bergman J.P., Monemar B. J. Appl. Phys. 83:1998;3168.
4. Shubina T.V., Ivanov S.V., Toropov A.A., Aliev G.N., Tkatchman M.G., Sorokin S.V., Il'inskaya N.D., Kop'ev P.S. J. Crystal Growth. 184/185:1998;596.
5. A. Toropov, S. Ivanov, T. Shubina, S. Sorokin, A. Lebedev, A. Sitnikova, P. Kop'ev, M. Willander, G. Pozina, J. Bergman, B. Monemar, Proceedings of the International Symposium on QD's 98, 1998, Sapporo, Japan, Jpn. J. Appl. Phys., to be published.