메뉴 건너뛰기




Volumn 35, Issue 8, 1999, Pages 636-638

218 W quasi-CW operation of 1.83 μm two-dimensional laser diode array

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032643073     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990317     Document Type: Article
Times cited : (5)

References (5)
  • 1
    • 0345319503 scopus 로고
    • GaSb-based semiconductor lasers in the 4-μm band
    • CHOI, H.K , TURNER, G W., and LE, H.Q.: 'GaSb-based semiconductor lasers in the 4-μm band', Inst. Phys. Conf. Sci., 1995, Vol. 144, pp. 1-7
    • (1995) Inst. Phys. Conf. Sci. , vol.144 , pp. 1-7
    • Choi, H.K.1    Turner, G.W.2    Le, H.Q.3
  • 4
    • 0030219135 scopus 로고    scopus 로고
    • 1.5 μm wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power
    • GARBUZOV, D., XU, L , FORREST, S R., MENNA, R., MARTINELLI, R , and CONNOLLY, J.C : '1.5 μm wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power', Electron. Lett., 1996, 32, pp. 1717-1718
    • (1996) Electron. Lett. , vol.32 , pp. 1717-1718
    • Garbuzov, D.1    Xu, L.2    Forrest, S.R.3    Menna, R.4    Martinelli, R.5    Connolly, J.C.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.