Intermediate high-pressure phase of silicon

Solid State Communications

Volumn 110, Issue 11, 1999, Pages 615-619

  Christensen, N E ^a   Novikov, D L ^b   Methfessel, M ^c  

^a AARHUS UNIVERSITY   (Denmark)

^b Arthur D Little Inc   (United States)

^c IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL SYMMETRY; EQUATIONS OF STATE; RELAXATION PROCESSES;

HEXAGONAL CLOSE PACKED (HCP) STRUCTURE;

SEMICONDUCTING SILICON;

EID: 0032642321     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(99)00120-9     Document Type: Article

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