Neural network modeling of GaAs IC material and MESFET device characteristics

International Journal of RF and Microwave Computer-Aided Engineering

Volumn 9, Issue 3, 1999, Pages 241-253

  Creech, Gregory L ^a   Zurada, Jacek M ^b,c,d  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b University of Louisville   (United States)

^c GDANSK UNIVERSITY OF TECHNOLOGY   (Poland)

^d IEEE

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; INTEGRATED CIRCUITS; MESFET DEVICES; MICROWAVE DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

NEUROCOMPUTING;

MULTILAYER NEURAL NETWORKS;

EID: 0032641445     PISSN: 10964290     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1099-047X(199905)9:3<241::AID-MMCE8>3.0.CO;2-P     Document Type: Article

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