Photoreflectance investigations of AlxGa1-xAs/GaAs band-gap dependence on Al content

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3725, Issue , 1999, Pages 205-208

  Sitarek, Piotr ^a   Misiewicz, Jan ^a   Veje, Erling ^a  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; ENERGY GAP; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SPECTROSCOPY; X RAY DIFFRACTION ANALYSIS;

FRANZ-KELDYSH OSCILLATIONS; PHOTOREFLECTANCE SPECTROSCOPY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032641054     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (4)