SCOPUS 정보 검색 플랫폼

Volumn 201, Issue , 1999, Pages 506-509

Structural and optical properties of high-quality ZnTe grown on GaAs using ZnSe/ZnTe strained-layer superlattices buffer layer

(4) Tu, R C a Su, Y K a Huang, Y S b Chien, F R c

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

c NATIONAL TAIWAN OCEAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; SPECTRUM ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

CONTACTLESS ELECTROREFLECTANCE; EPILAYERS; PIEZOREFLECTANCE; STRAINED-LAYER SUPERLATTICES;

CRYSTAL GROWTH;

EID: 0032639393 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)01387-6 Document Type: Article

Times cited : (4)

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