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Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 63, Issue 1, 1999, Pages 163-170

Roles of orbital in magnetoelectronic properties of colossal magnetoresistive manganites

(8) Okuda, T a Kimura, T a Kuwahara, H a,b Tomioka, Y a Asamitsu, A a,c Okimoto, Y a Saitoh, E c Tokura, Y a,c

a JT RES CENTER FOR ATOM TECHNOLOGY (Japan)

b SOPHIA UNIVERSITY (Japan)

c UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; CARRIER MOBILITY; DEGREES OF FREEDOM (MECHANICS); MAGNETORESISTANCE; METAL INSULATOR BOUNDARIES; SEMICONDUCTING MANGANESE COMPOUNDS;

COLOSSAL MAGNETORESISTANCE (CMR); MAGNETOELECTRONIC PROPERTIES; MANGANITES; ORBITAL DEGREES OF FREEDOM;

MAGNETIC SEMICONDUCTORS;

EID: 0032638922 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(99)00068-9 Document Type: Article

Times cited : (17)

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