Electrically induced optical absorption in Al-CuAlS2-Au diode

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 6 A/B, 1999, Pages

  Ishibashi, Naohiro ^a   Nishi, Takao ^a   Hayashi, Naoyuki ^a   Furuhashi, Chihomi ^a   Sato, Katsuaki ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ALUMINUM; ANNEALING; CRYSTAL GROWTH; ELECTRIC POTENTIAL; FERMI LEVEL; GOLD; LIGHT ABSORPTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR METAL BOUNDARIES;

CHALCOPYRITE; COPPER ALUMINUM DISULFIDE;

SCHOTTKY BARRIER DIODES;

EID: 0032638888     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l626     Document Type: Article

References (7)

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