p-Type doping of ZnSe and related materials controlled by diluting nitrogen in an inert gas

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 938-941

  Tournie E ^a   Brunet, P ^a   Faurie, J P ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; COMPOSITION EFFECTS; ENERGY GAP; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; ZINC ALLOYS;

FREE HOLE CONCENTRATION; QUATERNARY ALLOYS;

MOLECULAR BEAM EPITAXY;

EID: 0032638479     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01497-3     Document Type: Article

References (9)

1. Park R.M., Troffer M.B., Rouleau C.M., DePuydt J.M., Haase M.A. Appl. Phys. Lett. 57:1990;2127.
2. Ohkawa K., Karasawa T., Mitsuyu T. J. Crystal Growth. 111:1991;797.
3. Hauksson I.S., Simpson J., Wang S.Y., Prior K.A., Cavenett B.C. Appl. Phys. Lett. 61:1992;2208.
4. Qiu J., DePuydt J.M., Cheng H., Haase M.A. Appl. Phys. Lett. 59:1991;2992.
5. Townsley C.M., Davies J.J., Wolverson D., Boyce P.J., Horsburgh G., Steele T.A., Prior K.A., Cavenett B.C. Phys. Rev. B. 53:1996;10983.
6. Tournié E., Morhain C., Neu G., Faurie J.-P. Phys. Rev. B. 56:1997;R1657.
7. Tournié E., Morhain C., Neu G., Faurie J.-P. J. Crystal Growth. 184/185:1998;520.
8. Chadi D.J., Troullier N. Physica B. 185:1993;128.
9. Hirano K., Suemune I., Sato G. Jpn. J. Appl. Phys. 36:1997;L37.