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Volumn 11, Issue 7, 1999, Pages 788-790

Angled-facet S-bend semiconductor optical amplifiers for high-gain and large-extinction ratio

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT EXTINCTION; LIGHT REFLECTION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL SWITCHES; OPTICAL WAVEGUIDES; SEMICONDUCTING INDIUM PHOSPHIDE; SINGLE MODE FIBERS;

EID: 0032637077     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.769708     Document Type: Article
Times cited : (26)

References (7)
  • 1
    • 0344612083 scopus 로고    scopus 로고
    • Photonic switching networks with optical cross-connection and optical add-drop multiplexing systems
    • Sendai, Japan, paper PMBI
    • N. Henmi and T. Shiragaki, "Photonic switching networks with optical cross-connection and optical add-drop multiplexing systems," in Tech. Dig. OSA Photonics in Switching, Sendai, Japan, 1996, vol. 1, pp. 14-15, paper PMBI.
    • (1996) Tech. Dig. OSA Photonics in Switching , vol.1 , pp. 14-15
    • Henmi, N.1    Shiragaki, T.2
  • 2
    • 0004860969 scopus 로고    scopus 로고
    • Spot size converter integrated semiconductor optical amplifier gates with low power consumption
    • Seoul, Korea, paper 9C3-2
    • H. Hatakeyama, S. Kitamura, K. Hamamoto, M. Yamaguchi, and K. Komatsu, "Spot size converter integrated semiconductor optical amplifier gates with low power consumption," in Tech. Dig. 2nd OECC, Seoul, Korea, 1997, paper 9C3-2.
    • (1997) Tech. Dig. 2nd OECC
    • Hatakeyama, H.1    Kitamura, S.2    Hamamoto, K.3    Yamaguchi, M.4    Komatsu, K.5
  • 4
    • 0344612077 scopus 로고    scopus 로고
    • 10 Gbps/ch space-division optical cell switching with 8 × 8 gate type switch matrix employing gate turn-on delay compensator
    • Sendai, Japan, postdeadline paper PThCl
    • S. Takahashi, T. Kato, H. Takeshita, S. Kitamura, and N. Henmi, "10 Gbps/ch space-division optical cell switching with 8 × 8 gate type switch matrix employing gate turn-on delay compensator," OSA Photonics in Switching, Sendai, Japan, 1996, pp. 12-15, postdeadline paper PThCl.
    • (1996) OSA Photonics in Switching , pp. 12-15
    • Takahashi, S.1    Kato, T.2    Takeshita, H.3    Kitamura, S.4    Henmi, N.5
  • 5
    • 0023416131 scopus 로고
    • Fabrication and performance of 1.5-μm GaInAsP travelling-wave laser amplifiers with angled facets
    • C. E. Zah, J. S. Osinski, C. Caneau, S. G. Menocal, L. A. Reith, J. Salzman, F. K. Shokoohi, and T. P. Lee, "Fabrication and performance of 1.5-μm GaInAsP travelling-wave laser amplifiers with angled facets," Electron. Lett., vol. 23, no. 19, pp. 990-991, 1987.
    • (1987) Electron. Lett. , vol.23 , Issue.19 , pp. 990-991
    • Zah, C.E.1    Osinski, J.S.2    Caneau, C.3    Menocal, S.G.4    Reith, L.A.5    Salzman, J.6    Shokoohi, F.K.7    Lee, T.P.8
  • 6
    • 0029243961 scopus 로고
    • Very low power consumption semiconductor optical amplifier array
    • Feb.
    • S. Kitamura, K. Komatsu, and M. Kitamura, "Very low power consumption semiconductor optical amplifier array," IEEE Photon. Technol. Lett., vol. 7, pp. 147-148, Feb. 1995.
    • (1995) IEEE Photon. Technol. Lett. , vol.7 , pp. 147-148
    • Kitamura, S.1    Komatsu, K.2    Kitamura, M.3
  • 7
    • 0027906407 scopus 로고
    • Selective metalorganic vapor phase epitaxial growth of InGaAsP/InP layers with bandgap energy control in InGaAs/InGaAsP multiple-quantum well structures
    • T. Sasaki, M. Kitamura and I. Mito, "Selective metalorganic vapor phase epitaxial growth of InGaAsP/InP layers with bandgap energy control in InGaAs/InGaAsP multiple-quantum well structures," J. Cryst. Growth, vol. 132, pp. 435-443, 1993.
    • (1993) J. Cryst. Growth , vol.132 , pp. 435-443
    • Sasaki, T.1    Kitamura, M.2    Mito, I.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.