Fabrication of gated diamond field emitter array using a selective diamond growth process

Thin Solid Films

Volumn 341, Issue 1, 1999, Pages 216-220

  Ha, S C ^a   Kang, D H ^a   Kim, K B ^a   Min, S H ^b   Kim, I H ^b   Lee, J D ^b  

^a Seoul National University   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DENSITY (SPECIFIC GRAVITY); DEPOSITION; ELECTRIC POTENTIAL; NUCLEATION; OXIDES; PRESSURE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON COMPOUNDS; SUBSTRATES; TRIODES;

BIAS ENHANCED NUCLEATION; BIAS VOLTAGE; FIELD EMISSION PROPERTY; GATED DIAMOND FIELD EMITTER ARRAY; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; SELECTIVE DIAMOND GROWTH;

SEMICONDUCTING DIAMONDS;

EID: 0032636923     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01548-X     Document Type: Article

References (6)

1. Geis M.W., Efremow N.N., Woodhouse J.D., McAleese M.D., Marchywaka M., G Socker D., Hochedez J.F. IEEE Electron. Device Lett. 12:1991;456.
2. Himpsel F.J., Kanpp J.A., Knapp J.A., Van Vechten J.A., Eastman D.E. Phys. Rev B. 20:1979;621.
3. Okano K., Hoshina K., Iida M., Koizumi S., Inozuka T. Appl. Phys. Lett. 64:1994;9747.
4. W.P. Kang, A. Wisitsoraat, J.L. Davison, M. Howell, Q. Li, J.Fi. Xu, D.V. Kerns, Technical Digest IVMC'97 (1997) 567.
5. Jiang X., Boettger E., Paul M., Klages C.P. Appl. Phys. Lett. 65:1994;1519.
6. Roberts P.G., Milne D.K., John P., Jubber M.G., Wilson J.I.B. J. Mater. Res. 1:1996;3128.