Low temperature chemical vapor deposition of (Ba, Sr)TiO3 thin films for high density dynamic random access memory capacitors

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 2 B, 1999, Pages

  Joo, Jae Hyun ^a   Park, Jong Bum ^a   Kim, Younsoo ^a   Lee, Kong Soo ^a   Lee, Jun Sik ^a   Roh, Jae Sung ^a   Kim, Jae Jeong ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM TITANATE; CAPACITORS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC PROPERTIES; EVAPORATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN OXIDES; THIN FILMS;

BARIUM STRONTIUM TITANATE; DYNAMIC RANDOM ACCESS MEMORY (DRAM) CAPACITORS;

DIELECTRIC FILMS;

EID: 0032636059     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.38.L195     Document Type: Article

References (8)