Comparative study of radiation damage on high resistivity silicon

EPJ Applied Physics

Volumn 6, Issue 2, 1999, Pages 121-130

  Mangiagalli, P ^a,b   Levalois, M ^a   Marie, P ^a   Rancoita, P G ^c   Rattaggi, M ^c  

^a LERMAT Laboratoire d'Etude et de Recherche sur les Materiaux   (France)

^b EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^c INFN SEZIONE DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRON IRRADIATION; HALL EFFECT; ION BOMBARDMENT; KRYPTON; MAGNETIC FIELD MEASUREMENT; NEUTRON IRRADIATION; POSITRONS; RADIATION DAMAGE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING;

SEMICONDUCTOR DETECTORS;

PARTICLE DETECTORS;

EID: 0032635909     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:1999161     Document Type: Article

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