Refractive-index-adjustment of SiO2-GeO2 films deposited by radio frequency magnetron sputtering

Applied Surface Science

Volumn 142, Issue 1, 1999, Pages 58-62

  Kashimura, S ^a   Islam, M R ^a   Takeuchi, M ^a   Hongo, A ^b   Ohira, K ^b   Imoto, K ^b   Kuma, S ^b  

^a IBARAKI UNIVERSITY   (Japan)

^b HITACHI CABLE LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; GERMANIUM COMPOUNDS; HIGH TEMPERATURE OPERATIONS; MAGNETRON SPUTTERING; OPTICAL WAVEGUIDES; OXYGEN; REFRACTIVE INDEX; SILICA;

OPTICAL ATTENUATION; OXYGEN ANNEALING; RADIO FREQUENCY MAGNETRON SPUTTERING;

METALLIC FILMS;

EID: 0032635727     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00631-X     Document Type: Article

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