Γ-X electron transfer in GaAs/AlAs type-I superlattices

Applied Surface Science

Volumn 142, Issue 1, 1999, Pages 624-628

  Mimura, H ^a   Hosoda, M ^b   Ohtani, N ^b   Yokoo, K ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; GROUND STATE; PHOTOCURRENTS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

CONDUCTION BAND; ELECTRON TRANSFER;

SEMICONDUCTOR SUPERLATTICES;

EID: 0032635509     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00652-7     Document Type: Article

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