Design and fabrication of low power polysilicon sources

Solid-State Electronics

Volumn 43, Issue 7, 1999, Pages 1239-1244

  Das, N C ^a   Monroy, C ^a   Robinson, D ^b   Jhabvala, M ^c  

^a RAYTHEON COMPANY   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

^c NASA GODDARD SPACE FLIGHT CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DESIGN; ELECTRIC RESISTANCE; ELECTRON DEVICE MANUFACTURE; ION IMPLANTATION; MICROMACHINING; SEMICONDUCTING BORON; SPACE FLIGHT;

LOW POWER POLYSILICON SOURCES;

LIGHT SOURCES;

EID: 0032633829     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00339-6     Document Type: Article

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