Low frequency excess noise measurements in high frequency polysilicon emitter bipolar transistors

Solid-State Electronics

Volumn 43, Issue 4, 1999, Pages 729-740

  Routoure, Jean Marc ^a   Lepaisant, Jacques ^a   Bloyet, Daniel ^a   Serge Bardy, ^b   Biard, Christelle ^b   Gambus, Laurent ^b   Lebailly, Jacques ^b  

^a Intell Artificielle Instrum C   (France)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRIC CONTACTS; ELECTRIC RESISTANCE; ELECTRON TUNNELING; ELECTRONIC DENSITY OF STATES; GAIN MEASUREMENT; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SIGNAL NOISE MEASUREMENT; SPURIOUS SIGNAL NOISE;

EMITTER ACCESS RESISTANCE; HIGH FREQUENCY POLYSILICON EMITTER BIPOLAR TRANSISTORS; LOW FREQUENCY EXCESS NOISE MEASUREMENT; METALLIC CONTACT RECOMBINATION;

BIPOLAR TRANSISTORS;

EID: 0032633768     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00323-2     Document Type: Article

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