On the energy level of EL2 in GaAs

Solid-State Electronics

Volumn 43, Issue 7, 1999, Pages 1317-1319

  Look, D C ^a   Fang, Z Q ^a  

^a WRIGHT STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC VARIABLES MEASUREMENT; HALL EFFECT; RELIABILITY; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS;

ACCURACY; HALL CONCENTRATION MEASUREMENT;

ELECTRON ENERGY LEVELS;

EID: 0032633604     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00130-6     Document Type: Article

References (6)

1. Bourgoin J.C., Neffati T. Solid-St Electr. 43:1999;153.
2. Look D.C. Semicond Semimet. 38:1993;91.
3. Fang Z-Q, Look DC. Unpublished.
4. Duncan W.M., Westphal G.H. Lindley W.T. GaAs and related compounds. Inst. of Phys. Conf. Ser. vol. 83:1987;39 IOP, Bristol.
5. Blakemore J.S. J Phys Chem Solids. 49:1988;627.
6. Martin G.M., Farges J.P., Jacob G., Hallais J.P. J Appl Phys. 51:1980;2840.