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Volumn 43, Issue 7, 1999, Pages 1299-1305

Emitter series resistance effect of multiple heterojunction contacts for Pnp heterojunction bipolar transistors

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; ELECTRON ENERGY LEVELS; HETEROJUNCTION BIPOLAR TRANSISTORS; MATHEMATICAL MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0032633603     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00117-3     Document Type: Article
Times cited : (3)

References (13)
  • 1
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    • (1957) Proc IRE (Lett) , vol.45 , pp. 90
    • Kulke, B.1    Miller, S.L.2
  • 2
    • 0021406709 scopus 로고
    • Method for determining the emitter and base resistances of bipolar transistors
    • Ning T.H., Tang D.D. Method for determining the emitter and base resistances of bipolar transistors. IEEE Trans Electron Devices. ED-31:1984;409.
    • (1984) IEEE Trans Electron Devices , vol.31 , pp. 409
    • Ning, T.H.1    Tang, D.D.2
  • 3
    • 0015490526 scopus 로고
    • Characterization and measurement of the base and emitter resistances of bipolar transistors
    • Sansen W.M.C., Meyer R.G. Characterization and measurement of the base and emitter resistances of bipolar transistors. IEEE J Solid-State Circuits. SC-7:1972;492.
    • (1972) IEEE J Solid-State Circuits , vol.7 , pp. 492
    • Sansen, W.M.C.1    Meyer, R.G.2
  • 4
    • 0027230627 scopus 로고
    • High-speed, high current gain pnp InP/InGaAs heterojunction bipolar transistors
    • Lunardi L.M., Chandrasekhar S., Hamm R.A. High-speed, high current gain pnp InP/InGaAs heterojunction bipolar transistors. IEEE Electron Device Lett. 14:1993;19.
    • (1993) IEEE Electron Device Lett , vol.14 , pp. 19
    • Lunardi, L.M.1    Chandrasekhar, S.2    Hamm, R.A.3
  • 6
    • 0344870537 scopus 로고
    • Barriers, junctions, surfaces, and devices
    • New York: Van Nostrand Reinhold. Chapter 5
    • Boer K.W. Barriers, junctions, surfaces, and devices. Survey of Semiconductor Physics. vol. II:1992;357 Van Nostrand Reinhold, New York. Chapter 5.
    • (1992) Survey of Semiconductor Physics , vol.2 , pp. 357
    • Boer, K.W.1
  • 9
    • 0020296889 scopus 로고
    • 1-y and related binaries
    • 1-y and related binaries. J of Appl Phys. 53:1982;8775.
    • (1982) J of Appl Phys , vol.53 , pp. 8775
    • Adachi, S.1
  • 11
    • 0342949674 scopus 로고    scopus 로고
    • A thermionic-emission-diffusion model for graded-base pnp heterojunction bipolar transistors
    • Datta S., Roenker K.P., Cahay M.M. A thermionic-emission-diffusion model for graded-base pnp heterojunction bipolar transistors. J of Appl Phys. 83:1998;8036-8045.
    • (1998) J of Appl Phys , vol.83 , pp. 8036-8045
    • Datta, S.1    Roenker, K.P.2    Cahay, M.M.3
  • 12
    • 0041528072 scopus 로고    scopus 로고
    • Hole transport and quasi-fermi level splitting at the emitter-base junction in pnp heterojunction bipolar transistors
    • Datta S., Roenker K.P., Cahay M.M. Hole transport and quasi-fermi level splitting at the emitter-base junction in pnp heterojunction bipolar transistors. J of Appl Phys. 85:1999;1949-1953.
    • (1999) J of Appl Phys , vol.85 , pp. 1949-1953
    • Datta, S.1    Roenker, K.P.2    Cahay, M.M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.