Characteristics of three-beam photoreflectance in ZnTe/GaAs with deep traps

Solid State Communications

Volumn 110, Issue 11, 1999, Pages 605-609

  Cho, Y J ^a   Lee, K H ^a   Park, H L ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL SYMMETRY; ELECTRIC FIELDS; ELECTRON SPECTROSCOPY; ELECTRON TRAPS; EMISSION SPECTROSCOPY; LIGHT REFLECTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SYNTHESIS (CHEMICAL); THERMAL EFFECTS;

PHOTOREFLECTANCE SPECTROSCOPY; THERMAL EMISSION; ZINC TELLURIDE;

SEMICONDUCTOR JUNCTIONS;

EID: 0032633376     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(99)00152-0     Document Type: Article

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