Asymmetric structure of the Si(111)-√3 × √3-Ag surface

Surface Science

Volumn 429, Issue 1, 1999, Pages

  Aizawa, H ^a   Tsukada, M ^a   Sato, N ^a   Hasegawa, S ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ELECTRONIC STRUCTURE; INTERFACES (MATERIALS); PROBABILITY DENSITY FUNCTION; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SILVER;

ASYMMETRIC STRUCTURE; HONEYCOMB CHAINED TRIANGLE MODEL; SURFACE RECONSTRUCTION; SURFACE RELAXATION;

SURFACE STRUCTURE;

EID: 0032632721     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00424-0     Document Type: Article

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