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Volumn 11, Issue 10 A, 1999, Pages 2265-2278
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The effect of the atomic relaxation around defects on the electronic structure and optical properties of β-SiC
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL ATOMIC STRUCTURE;
CRYSTAL DEFECTS;
ELECTRON RESONANCE;
ELECTRONIC STRUCTURE;
ENERGY GAP;
OPTICAL PROPERTIES;
RELAXATION PROCESSES;
LATTICE RELAXATION;
SILICON CARBIDE;
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EID: 0032632042
PISSN: 09538984
EISSN: None
Source Type: Journal
DOI: 10.1088/0953-8984/11/10/013 Document Type: Article |
Times cited : (17)
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References (35)
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