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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 1, 1999, Pages 286-290

A study of longitudinal and transversal range parameters of ion-implanted 40-360 keV molybdenum in silicon

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

Ion implantation; Kurtosis; Longitudinal range straggling; Projected range; Secondary ion mass spectrometry; Skewness; Transversal range straggling

Indexed keywords

CURRENT DENSITY; CURVE FITTING; DIFFERENTIAL EQUATIONS; IONS; MATHEMATICAL MODELS; MOLYBDENUM; PARAMETER ESTIMATION; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS;

BIERSACK THEORY; IMPLANTED ION DEPTH PROFILES; ION IMPLANTER; KURTOSIS; LONGITUDINAL RANGE STRAGGLING; PARAMETER EXTRACTION; PEARSON DISTRIBUTION; SKEWNESS; TRANSVERSAL RANGE STRAGGLING;

ION IMPLANTATION;

EID: 0032631802 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.38.286 Document Type: Article

Times cited : (7)

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