Effects of pre-hydrogenation on the relaxation and bandgap variation of thermally nanocrystallized silicon layers

Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

Volumn 79, Issue 5, 1999, Pages 777-791

  Achiq, A ^a   Rizk, R ^a   Madelon, R ^a   Gourbilleau, F ^a   Voivenel, P ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; CRYSTALLIZATION; ENERGY GAP; HIGH TEMPERATURE EFFECTS; HYDROGENATION; NANOSTRUCTURED MATERIALS;

URBACH EDGE ENERGY;

AMORPHOUS SILICON;

EID: 0032631632     PISSN: 13642812     EISSN: None     Source Type: Journal    
DOI: 10.1080/13642819908205749     Document Type: Article

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