Highly selective ammonia gas sensor using surface-ruthenated zinc oxide

Sensors and Actuators, A: Physical

Volumn 75, Issue 2, 1999, Pages 162-167

  Aslam, M ^a   Chaudhary, V A ^a   Mulla, I S ^a   Sainkar, S R ^a   Mandale, A B ^a   Belhekar, A A ^a   Vijayamohanan, K ^a  

^a NATIONAL CHEMICAL LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CYCLIC VOLTAMMETRY; ENERGY DISPERSIVE SPECTROSCOPY; RUTHENIUM COMPOUNDS; SCANNING ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

AMMONIA GAS SENSORS; RUTHENIUM OXIDE;

CHEMICAL SENSORS;

EID: 0032631429     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(99)00050-3     Document Type: Article

References (27)

1. Seiyama T., Kato A., Fujishi K., Nagatani M. A new detector for gaseous components using semiconductor thin films. Anal. Chem. 34:1962;1502-1503.
2. Seiyama T., Kagawa S. Study on a detector for gaseous components using semiconductor thin films. Anal. Chem. 38:1966;1069-1073.
3. Boccuzi F., Guglieminotti E., Chiorino A. IR study of gas sensor materials: Nitrogen oxide interaction on zinc oxide and titanium dioxide, pure or modified by metals. Sensors and Actuators B. 7:1992;645-650.
4. Bott B., Jones T.A., Mann B. The detection and measurement of CO using zinc oxide single crystal. Sensors and Actuators B. 5:1984;65-73.
5. 2 thin film gas sensor. J. Appl. Phys. 53:1982;2785-2787.
6. McAleer J.F., Moseley P.T., Norris J.W., Williams D.E., Taylor P., C B. Tofield, tin oxide based gas sensors. Mater. Chem. Phys. 17:1987;577-583.
7. Orlik D.R., Ivanovskaya M.I., Kol K.D. Characterisation of semiconducting tin oxide film prepared by sol-gel method. J. Anal. Chem. 50(11):1995;1073-1077.
8. 3 monitoring: structural and physical characterisation. J. Appl. Phys. 82(1):1997;54-59.
9. Dulehohn J.I., Haefner S.C., Burglund K.A., Dunbar K.R. Reversible CO addition to sol-gel derived composite films containing a cationic rhodium(I) complex: towards development of a new class of molecule-based CO sensors. Chem. Mater. 4(3):1992;506-508.
10. Yamazoe N., Kurokawa T., Seiyama T. Effect of additives on semiconductors. Sensors and Actuators. 4:1983;283-289.
11. Matsushima S., Teraoka Y., Miura N., Yamazoe N. Electronic interaction between metal additives in tin dioxide based gas sensors. Jpn. J. Appl. Phys. 27:1988;1798-1802.
12. 2. J. Electrochem. Soc. 136:1989;2740-2747.
13. Basu S., Dutta A. Room temperature hydrogen sensor based on ZnO. Mater. Chem. Phys. 47:1997;93-96.
14. Uozomi G., Miyayama M., Yanagida H. Fabrication of a CuO infiltrated ZnO composite and its gas sensing properties. J. Mater. Sci. 32(11):1997;2991-2996.
15. Chaudhary V.A., Mulla I.S., Vijayamohanan K. Selective gas sensing properties of surface ruthenated tin oxide. J. Mater. Res. 14(1):1999;. to be published.
16. Saito S., Miyayama M., Koumoto K., Yanagida H. Gas sensing characteristics of porous ZnO and Pt/ZnO ceramics. J. Am. Cer. Soc. 68(1):1985;40-43.
17. Nanto H., Minami T., Takata S. Zinc oxide thin film ammonia gas sensors with high sensitivity and excellent selectivity. J. Appl. Phys. 60:1986;482-484.
18. x film sensor exposed to reducing and oxidising gases. Thin Solid Film. 193-194:1990;935-942.
19. Moseley P.T., Williams D.E. A selective ammonia sensor. Sensors and Actuators B. 1:1990;113-115.
20. Rosse G., Ghers M., Lebigot J., Guyader J., Laurent Y., Colin Y. Selective detection of ammonia by semiconductive pellets of zinc and germanium oxynitrides. Sensors and Actuators. 14(2):1988;133-141.
21. Masami A., Takashi T., Suto S., Takahiro S., Chiaki N., Norio M., Yamazoe N. Ammonia gas sensor using thick film of Au-loaded tungsten trioxide. J. Ceram. Soc. Jpn. 104(Dec.):1996;1112-1116.
22. Yamazoe N., Miura N., Tamaki J. Surface modification of semiconductor gas sensor. Trans. Mater. Res. Soc. Jpn. 15A:1994;111-116.
23. Winquist A., Spetz M., Armgarth C., Nylander, LundstrÖm I. Modified Pd metal-oxide-semiconductor structures with increased ammonia gas sensitivity. Appl. Phys. Lett. 43(9):1983;839-841.
24. LundstrÖm I., Shivaraman M.S., Svensson C.M. A hydrogen-sensitive Pd gate MOS transistor. J. Appl. Phys. 46:1975;3876-3881.
25. Mulla I.S., Pardhan S.D., Vijayamohanan K. Humidity sensing behaviour of surface modified zirconia. Sensors and Actuators. A. 57:1996;217-221.
26. D. Briggs, M.P. Seah, Practical Surface Analysis, 2nd edn., Vol. No. 1, Auger and X-ray Photoelectron Spectroscopy, Wiley, 1983, p. 421.
27. Yamazoe N. New approaches of improving semiconductor gas sensor. Sensors and Actuators B. 5:1991;7-19.