Effect of MnO addition on the electrical properties of Nb-doped SrTiO3 varistor

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 60, Issue 1, 1999, Pages 12-20

  Kim, Seong Ho ^a,b   Seon, Ho Won ^a,b   Kim, Hyo Tae ^a,b   Park, Jae Gwan ^a   Kim, Yoonho ^a   Byun, Jae Dong ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; CARRIER CONCENTRATION; ELECTRON TRAPS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; NIOBIUM; PERMITTIVITY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING MANGANESE COMPOUNDS; SEMICONDUCTOR DOPING; STRONTIUM COMPOUNDS; VARISTORS;

COMPLEX-CAPACITANCE PLANE ANALYSIS; DONOR CONCENTRATIONS; GRAIN BOUNDARY POTENTIAL BARRIERS; IMPEDANCE SPECTROSCOPY;

CERAMIC MATERIALS;

EID: 0032629565     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00451-6     Document Type: Article

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