Structural and photoelectric studies on double barrier quantum well infrared detectors

Solid-State Electronics

Volumn 43, Issue 4, 1999, Pages 723-727

  Wu, Wen Gang ^a   Jiang, De Sheng ^a   Cui, Li Qui ^a   Song, Chun Ying ^a   Zhuang, Yan ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRANSPORT PROPERTIES; LIGHT ABSORPTION; OPTICAL PROPERTIES; PHOTOELECTRICITY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS; SYNCHROTRON RADIATION; X RAY DIFFRACTION ANALYSIS;

DOUBLE BARRIER QUANTUM WELL INFRARED DETECTORS; INTERBAND PHOTOVOLTAIC SPECTRA; PHOTOGENERATED CARRIERS; SYNCHROTRON RADIATION X RAY ANALYSIS;

INFRARED DETECTORS;

EID: 0032629155     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00315-3     Document Type: Article

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