Atomistic simulation of defects and ion migration in LaYO3

Solid State Ionics

Volumn 123, Issue 1, 1999, Pages 121-129

  Ruiz Trejo, E ^a,b   Islam, M S ^c   Kilner, J A ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b Universidad Nacional Autonoma de Mexico Facultad de Quimica   (Mexico)

^c UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COMPUTATIONAL METHODS; COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; DOPING (ADDITIVES); ENTHALPY; IONS; OXYGEN; PEROVSKITE; POINT DEFECTS; PROTONS; SOLUBILITY;

ATOMISTIC SIMULATION; LANTHANUM YTTRATE; PROTON CONDUCTORS;

LANTHANUM COMPOUNDS;

EID: 0032628518     PISSN: 01672738     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-2738(99)00092-2     Document Type: Article

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