Electric field dependence of the excitonic properties in graded double quantum wells

Semiconductor Science and Technology

Volumn 14, Issue 5, 1999, Pages 412-418

  Sari, H ^a   Ergun Y ^a   Sokmen I ^b   Elagoz S ^a   Balkan, N ^c  

^a CUMHURIYET UNIVERSITY   (Turkey)

^b DOKUZ EYLUL UNIVERSITY   (Turkey)

^c UNIVERSITY OF ESSEX   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; EIGENVALUES AND EIGENFUNCTIONS; ELECTRIC FIELD EFFECTS; ELECTRON TRANSITIONS; EXCITONS; PHOTODETECTORS; SEMICONDUCTOR DEVICE STRUCTURES;

GRADED DOUBLE QUANTUM WELLS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032628142     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/5/007     Document Type: Article

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