Limitations on the determination of life prediction parameters of a silicon carbide with high resistance to slow crack growth

Journal of Materials Science Letters

Volumn 18, Issue 10, 1999, Pages 767-769

  Choi, S R ^a,b   Gyekenyesi, J P ^b  

^a CLEVELAND STATE UNIVERSITY   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BENDING STRENGTH; CRACK PROPAGATION; CREEP TESTING; ELASTIC MODULI; FATIGUE TESTING; FRACTURE TOUGHNESS; HARDNESS; RESIDUAL STRESSES; SERVICE LIFE; STRESS ANALYSIS; THERMAL EFFECTS;

CONSTANT STRESS-RATE TESTING; CYCLIC STRESS TESTING; SILICONIZED SILICON CARBIDE; SLOW CRACK GROWTH (SCG);

SILICON CARBIDE;

EID: 0032627497     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1006676714327     Document Type: Article

References (6)

1. S. R. CHOI, A. CHULYA and J. A. SALEM, National Aeronautics and Space Administration, Lewis Research Center, Cleveland, OH, Technical Memorandum TM 105568 (1992).
2. J. R. MCLAREN and R. W. DAVIGE, Proc. Brit. Ceram. Soc. 25 (1975) 151.
3. A. G. EVANS, Int. J. Fract. 10 (1974) 252.
4. J. A. SALEM and S. R. CHOI, Oak Ridge National Laboratory, Oak Ridge, TN, CTAHE Project, Bimonthly Technical Reports (1991-1992).
5. G. D. QUINN, Army Materials and Mechanics Research Center, Watertown, MA, Technical Report TR 80-15 (1980).
6. J. E. RITTER, N. BANDYOPADHYAY and K. JAKUS, Ceram. Bull. 60 (1981) 798.