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Volumn 143, Issue 1, 1999, Pages 319-322

Degradation of a gallium-arsenide photoemitting NEA surface by water vapour

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; PHOTOCATHODES; PHOTOEMISSION; QUANTUM EFFICIENCY; SURFACES; VAPORS; WATER;

EID: 0032625951     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00085-9     Document Type: Article
Times cited : (47)

References (12)
  • 1
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    • (1980) Rev. Sci. Instr. , vol.51 , pp. 478
    • Pierce, D.T.1
  • 4
    • 0030213737 scopus 로고    scopus 로고
    • Stable to unstable transition in the Cs, O activation layer on GaAs (100) surfaces with negative electron affinity in extremely high vacuum
    • Pastuszka S.et al. Stable to unstable transition in the Cs, O activation layer on GaAs (100) surfaces with negative electron affinity in extremely high vacuum. Appl. Surf. Sci. 99:1996;361.
    • (1996) Appl. Surf. Sci. , vol.99 , pp. 361
    • Pastuszka, S.1
  • 5
    • 0032117589 scopus 로고    scopus 로고
    • Acceleration of polarized electrons in ELSA
    • Nakamura S.et al. Acceleration of polarized electrons in ELSA. Nucl. Instrum. Meth. A. 411:1998;97.
    • (1998) Nucl. Instrum. Meth. A , vol.411 , pp. 97
    • Nakamura, S.1
  • 7
    • 0032164237 scopus 로고    scopus 로고
    • Surface charge limit in NEA superlattice photocathodes of polarized electron sources
    • Togawa K.et al. Surface charge limit in NEA superlattice photocathodes of polarized electron sources. Nucl. Instrum. Meth. A. 414:1998;431.
    • (1998) Nucl. Instrum. Meth. A , vol.414 , pp. 431
    • Togawa, K.1
  • 8
    • 0142055513 scopus 로고
    • The interaction of water with solid surfaces: Fundamental aspects
    • Thiel P.A., Madey Th.E. The interaction of water with solid surfaces: fundamental aspects. Surf. Sci. Rep. 7:1987;246.
    • (1987) Surf. Sci. Rep. , vol.7 , pp. 246
    • Thiel, P.A.1    Madey, Th.e.2
  • 10
    • 0026953478 scopus 로고
    • Adsorption kinetics of cesium and oxygen on GaAs (100), a model for the activation layer of GaAs photocathodes
    • Vergara G.et al. Adsorption kinetics of cesium and oxygen on GaAs (100), a model for the activation layer of GaAs photocathodes. Surf. Sci. 278:1992;131.
    • (1992) Surf. Sci. , vol.278 , pp. 131
    • Vergara, G.1
  • 11
    • 0024685429 scopus 로고
    • The Bates polarized source
    • Cates C.D.et al. The Bates polarized source. Nucl. Instrum. Meth. A. 278:1989;293.
    • (1989) Nucl. Instrum. Meth. A , vol.278 , pp. 293
    • Cates, C.D.1
  • 12
    • 0020721105 scopus 로고
    • Photoelectron spectroscopic determination of the structure of (Cs, O) activated GaAs (110) surfaces
    • Su C.Y.et al. Photoelectron spectroscopic determination of the structure of (Cs, O) activated GaAs (110) surfaces. J. Appl. Phys. 54:1983;1413.
    • (1983) J. Appl. Phys. , vol.54 , pp. 1413
    • Su, C.Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.