Design and characterization of high-voltage self-clamped IGBT's

IEEE Electron Device Letters

Volumn 20, Issue 8, 1999, Pages 424-427

  Shen, Z John ^a   Briggs, Dave ^a   Robb, Stephen P ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORK ANALYSIS; ELECTRIC NETWORK SYNTHESIS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); INTEGRATED COLLECTOR-GATE CLAMP DIODES; POWER SEMICONDUCTORS; UNCLAMPED INDUCTIVE SWITCHING (UIS);

BIPOLAR TRANSISTORS;

EID: 0032625146     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.778165     Document Type: Article

References (6)

1. U.S. Patent 5536958.
2. L. Mamileti, A. Taomoto, J. Shen, and S. Robb, "IGBT's designed for automotive ignition systems," in IEEE 27th Annu. Power Electronics Specialists Conf. (PESC), 1996.
3. H. Yilmaz, "Optimization and surface charge sensitivity of high voltage blocking structues with shallow junctions," IEEE Trans. Electron Devices, vol. 38, pp. 1666-1675, July 1991.
4. J. Korec and R. Held, "Comparison of DMOS/IGBT-compatible high voltage termiantion structures and passivation techniques," IEEE Trans. Electron Devices, vol. 40, pp. 1845-1853, Oct. 1993.
5. Z. J. Shen and S. P. Robb, "High voltage clamped IGBT for automotive ignition applications," in Proc. 10th Int. Symp. Power Semiconductor Devices and IC's (ISPSD), 1998, pp. 97-100.
6. MEDICI User Manual, Technology Modeling Associates, 1996.