Ka-Band Multistage MMIC Low-Noise Amplifier Using Source Inductors with Different Values for Each Stage

IEEE Microwave and Guided Wave Letters

Volumn 9, Issue 2, 1999, Pages 71-72

  Imai, Ryoichi ^b   Yamamoto, Minoru ^b   Kadowaki, Naoto ^b   Katoh, Takayuki ^a   Itoh, Yasushi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b National Institute of Information and Communications Technology   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INDUCTORS; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE AMPLIFIERS; RADIO RECEIVERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

LOW-NOISE AMPLIFIERS;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0032624822     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.755050     Document Type: Article

References (5)

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3. Y. Itoh, K. Nakahara, T. Sakura, N. Yoshida, T. Katoh, T. Takagi, and Y. Ito, “W-band monolithic low noise amplifiers for advanced microwave scanning radiometer,” IEEE Microwave GuidedWave Lett., vol. 5, pp. 59-61, Feb. 1995
4. S. Fujimoto, T. Katoh, T. Ishida, T. Oku, Y. Sasaki, T. Ishikawa, and Y. Mitsui, “Ka-band ultra low noise MMIC amplifier using pseudomorphic HEMT's,” in 1997 IEEE MTT-S Dig., pp. 17-20
5. M. W. Pospieszalski, “Modeling of noise parameters of MESFET's and MODFET's and their frequency and temperature dependence,” IEEE Trans. Microwave Theory Tech., vol. MTT-37, pp. 1340-1350, Sept. 1989