High-quality InGaN films grown by hot-wall epitaxy with mixed (Ga+In) source

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 4 B, 1999, Pages

  Chu, Shucheng ^a   Saisho, Tetsuhiro ^a   Fujimura, Kazuo ^a   Sakakibara, Shingo ^a   Tanoue, Fumiyasu ^a   Ishino, Kenei ^a   Ishida, Akihiro ^a   Harima, Hiroshi ^a   Chen, Yefan ^a   Yao, Takafumi ^a   Fujiyasu, Hiroshi ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FILM GROWTH; NITROGEN; PARTIAL PRESSURE; PHOTOLUMINESCENCE; PRESSURE EFFECTS; RAMAN SPECTROSCOPY; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; X RAY ANALYSIS;

BUFFER LAYERS; FULL WIDTH AT HALF MAXIMUM (FWHM); HOT-WALL EPITAXY; INDIUM GALLIUM NITRIDE; X RAY ROCKING CURVES;

SEMICONDUCTING FILMS;

EID: 0032624721     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l427     Document Type: Article

References (12)