Continuous-wave room temperature operation of bipolar cascade laser

Electronics Letters

Volumn 35, Issue 5, 1999, Pages 395-397

  Patterson, S G ^a   Petrich, G S ^a   Ram, R J ^a   Kolodziejski, L A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; OPTICAL FIBER COUPLING; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; TEMPERATURE;

BIPOLAR CASCADE LASER; ESAKI JUNCTION; SECOND LASER DIODE JUNCTION;

QUANTUM WELL LASERS;

EID: 0032623565     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990285     Document Type: Article

References (4)

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3. AYLING, S.O., WIGHT, D.R., ALLENSON, M.B., HILTON, K.P., and SMITH, G.W.: 'Novel integrated laser devices with greatly enhanced quantum efficiency and intrinsic RF matching for low loss, broad band opto-microwave applications'. Microwave Photonics '98, October 1998
4. VAN DER ZIEL, J.P., and TSANG, W.T.: 'Integrated multilayer GaAs lasers separated by tunnel junctions', Appl. Phys. Lett., 1982, 41, (6), pp. 499-501