Pressure behavior of deep centers in ZnSxTe1-x alloys

Physica Status Solidi (B) Basic Research

Volumn 211, Issue 1, 1999, Pages 163-169

  Liu, N Z ^a   Li, G H ^a   Zhang, W ^a   Zhu, Z M ^a   Han, H X ^a   Wang, Z P ^a   Ge, W K ^b   Sou, I K ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032623270     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199901)211:1<163::AID-PSSB163>3.0.CO;2-3     Document Type: Article

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