Evidence of strong effect from the interface on the electrical characteristics of ZnSe/GaAs heterojunctions

Journal of Applied Physics

Volumn 85, Issue 7, 1999, Pages 3721-3725

  Seghier, D ^a   Hauksson, I S ^a   Gislason, H P ^a   Prior, K A ^b   Cavenett, B C ^b  

^a UNIVERSITY OF ICELAND   (Iceland)

^b HERIOT WATT UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; HIGH TEMPERATURE EFFECTS; HYSTERESIS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS; TRANSIENTS;

CAPACITANCE-VOLTAGE CHARACTERISTICS; REVERSE BIAS;

HETEROJUNCTIONS;

EID: 0032621877     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369738     Document Type: Article

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